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| Product Bulletin OP905 June 1996 PIN Silicon Photodiode Type OP905 Features *Narrow receiving angle *Linear response vs. irradiance *Fast switching time *T-1 package style *Small package ideal for space limited applications Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in nA, use the formula ID = 10(0.042 TA-1.5) where TA is ambient temperature in o C. Description The OP905 device consists of a PIN silicon photodiode molded in a clear epoxy package which allows spectral response from visible to infrared light wavelengths. The narrow receiving angle provides excellent on-axis coupling. These devices are 100% production tested using infrared light for close correlation with Optek' GaAs and s GaAlAs emitters. Typical Performance Curves Relative Response vs. Wavelength Coupling Characteristics OP905 and OP265 VR = 5 V IF = 20 mA - Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-52 Distance Between Lens Tips - inches (972) 323-2200 Fax (972) 323-2396 Type OP905 Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL IL ID V(BR) VF CT tr, tf PARAMETER Reverse Light Current Reverse Dark Current Reverse Breakdown Voltage Forward Voltage Total Capacitance Rise Time, Fall Time MIN TYP MAX UNITS 14 1 60 1.2 4 5 32 60 A nA V V pF ns TEST CONDITIONS VR = 5 V, Ee = 0.50 mW/cm2(3) VR = 30 V, Ee = 0 IR = 100 A IF = 1 mA VR = 20 V, Ee = 0, f = 1.0 MHz VR = 20 V, = 850 nm, RL = 50 Typical Performance Curves Normalized Light Current vs Reverse Voltage TA = 25o C = 935 nm Normalized to VR = 5 V Total Capacitance vs Reverse Voltage Normalized Light and Dark Current vs Ambient Temperature VR = 5 V = 935 nm Normalized to TA = 25o C TA = 25o C Ee = 0 mW/cm2 f = 1 MHz Light Current Dark Current VR - Reverse Voltage - V VR - Reverse Voltage - V TA - Ambient Temperature - oC Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement VR = 5 V TA = 25o C = 935 nm Test Conditions: = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches Ee - Irradiance - mW/cm2 - Angular Displacement - Deg. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-53 |
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